THE STRUCTURE OF GAN LAYERS GROWN ON SIC AND SAPPHIRE BY MOLECULAR-BEAM EPITAXY

A comparative study of the defects at the interfaces and inside the la yers was carried out in GaN/AlN epitaxial layers on SiC and sapphire. Whereas surface cleaning of the sapphire substrates is rather standard ised now, the SiC substrates cleaning is still to optimise conditions, as the high densities of defects inside the epitaxial layers cannot b e explained solely by the 3.54% lattice mismatch. The investigated spe cimens were grown by molecular beam epitaxy (MBE), either assisted by electron cyclotron resonance or an NH3 gas source system to provide at omic nitrogen. Assuming that MBE is a growth technique mure or less cl ose to equilibrium, the observed defects are interpreted and a growth mechanism, for GaN layers on the stepped (0001) SiC and sapphire surfa ces, is proposed. (C) 1997 Elsevier Science S.A.