CHARACTERIZATION OF CA AND C IMPLANTED GAN

Authors
MENSCHING B LIU C RAUSCHENBACH B KORNITZER K RITTER W
Citation
B. Mensching et al., CHARACTERIZATION OF CA AND C IMPLANTED GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 105-108
Citations number
15
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
50
Issue
1-3
Year of publication
1997
Pages
105 - 108
Database
ISI
SICI code
0921-5107(1997)50:1-3<105:COCACI>2.0.ZU;2-Y
Abstract
Ca+, Ar+ and C+ ions were implanted in molecular beam epitaxy (MBE) gr own GaN. Results of Rutherford backscattering (RBS)/channeling measure ments are in agreement with simulated distributions of the implanted i ons and of the implantation induced damage. Doses higher than 1 x 10(1 5) cm(-2) result in the formation of heavy damage, which can be partia lly removed by rapid thermal annealing at 1150 degrees C. After ion im plantation followed by annealing, Hall-and Raman-measurements indicate a reduction of the carrier density due to damage caused by the irradi ation. Photoluminescence (PL)-measurements show an increase in the int ensity of donator-acceptor-pairs compared to the donator-bound exciton . (C) 1997 Elsevier Science S.A.