K. Aguir et al., THE EVOLUTION OF A-GAAS1-XNX C-GAAS INTERFACE STATES AS A FUNCTION OFAR-NH3 PLASMA/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 157-160
This work concerns investigations on electrical properties of amorphou
s GaAs1-xNx thin films grown on GaAs substrates. Film deposition was c
arried out by RF sputtering of a GaAs target by adding a nitrogen carr
ier gas (NH3) to an Ar plasma. Chemical etching of substrates followed
by different plasma treatments (like reverse bias and/or NH3 glow dis
charge) prior to film deposition have been studied. The effects of sub
strate and growth temperature and of total pressure in the reactor hav
e been analysed. Electrical characteristics (C-V and C-V(T)) have enab
led us to put in evidence the evolution of interface states of the a-G
aAs1-xNx/c-GaAs junctions. The amorphous GaAs1-xNx thin films are pote
ntially interesting to be considered for GaAs-based MIS structures, du
e to their relatively high resistivity values, or as passivating layer
s on GaAs devices. (C) 1997 Elsevier Science S.A.