PHOTOLUMINESCENCE PROPERTIES OF NANOCRYSTALLINE ALN LAYERS GROWN BY PULSE PLASMA-ASSISTED CVD

Authors
OLSZYNA A SIWIEC J DWILINSKI R KAMINSKA M KONWERSKAHRABOWSKA J SOKOLOWSKA A
Citation
A. Olszyna et al., PHOTOLUMINESCENCE PROPERTIES OF NANOCRYSTALLINE ALN LAYERS GROWN BY PULSE PLASMA-ASSISTED CVD, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 170-173
Citations number
14
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
50
Issue
1-3
Year of publication
1997
Pages
170 - 173
Database
ISI
SICI code
0921-5107(1997)50:1-3<170:PPONAL>2.0.ZU;2-I
Abstract
In this work, results of photoluminescence and absorption measurements on pulse plasma assisted CVD layers of AlN are presented. We studied nanocrystalline layers grown on silicon substrate at a temperature of 300 K. The efficient photoluminescence of nanocrystalline AlN layers, obtained under non optimal conditions, i.e. relatively low excitation energy, seems to be promising for light emitting applications of this material. (C) 1997 Elsevier Science S.A.