P. Bigenwald et al., III-V NITRIDES - WURTZITE SYMMETRY AND OPTICAL-ABSORPTION, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 208-211
We report here on the study of the theoretical optical properties of G
a based nitrides systems. The dipolar matrix elements and hole effecti
ve masses are presented as a function of the reciprocal wavevector fur
strained bulk GaN. We compute then the A. B and C exciton binding ene
rgies for strained GaN/Al0.2Ga0.8N quantum structures and present the
calculated optical density for a 50 Angstrom wide well. (C) 1997 Elsev
ier Science S.A.