COMPARATIVE-STUDY OF HEXAGONAL AND CUBIC GAN GROWTH BY RF-MBE

Authors
FEUILLET G WIDMANN F DAUDIN B SCHULER J ARLERY M ROUVIERE JL PELEKANOS N BRIOT O
Citation
G. Feuillet et al., COMPARATIVE-STUDY OF HEXAGONAL AND CUBIC GAN GROWTH BY RF-MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 233-237
Citations number
8
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
50
Issue
1-3
Year of publication
1997
Pages
233 - 237
Database
ISI
SICI code
0921-5107(1997)50:1-3<233:COHACG>2.0.ZU;2-R
Abstract
The epitaxial growth of both cubic and hexagonal GaN epilayers is cons idered here with the aim of comparing their physical properties. In pa rticular, the growth mechanisms at the first stages of growth will be dealt with together with the quality of the growth front. The optical characteristics of the epilayers will be compared by reference to the structure of the defects present within the different types of layers. (C) 1997 Elsevier Science S.A.