IN INCORPORATION EFFICIENCY AND COMPOSITION FLUCTUATIONS IN MOVPE GROWN GAINN GAN HETERO STRUCTURES AND QUANTUM-WELLS/

GaInN layers play a key role in short wavelength optoelectronic device s for the visible spectrum. However, the epitaxial growth of In contai ning nitrides is more problematic than that of GaN and AlGaN. In order to increase the In incorporation efficiency, lower growth temperature s of around 700-800 degrees C are needed. We have optimized the metalo rganic vapor-phase epitaxial growth of GaInN by decreasing the H-2/N-2 ratio in the gas-phase and increasing the growth rate. However, the d eposited films showed strong indications for compositional fluctuation s. Besides a large miscibility gap predicted for GaInN, the mismatch i nduced strain for GaN may play a major role in these growth problems. (C) 1997 Elsevier Science S.A.