GAIN SPECTRA IN CW INGAN GAN MQW LASER-DIODES

Authors
DEGUCHI T AZUHATA T SOTA T CHICHIBU S NAKAMURA S
Citation
T. Deguchi et al., GAIN SPECTRA IN CW INGAN GAN MQW LASER-DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 251-255
Citations number
23
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
50
Issue
1-3
Year of publication
1997
Pages
251 - 255
Database
ISI
SICI code
0921-5107(1997)50:1-3<251:GSICIG>2.0.ZU;2-V
Abstract
A systematic study on the optical gain of continuous wave InGaN/GaN mu ltiple quantum well laser diode wafers has been achieved by means of t he variable excitation-stripe length (VEL) method. It will be demonstr ated that mechanisms producing optical grain may vary according to the degree of fluctuation of InGaN composition in the lateral plane. (C) 1997 Elsevier Science S.A.