FABRICATION AND CHARACTERIZATION OF P-TYPE GAN METAL-SEMICONDUCTOR-METAL ULTRAVIOLET PHOTOCONDUCTORS GROWN BY MBE

Authors
FLANNERY LB HARRISON I LACKLISON DE DYKEMAN RI CHENG TS FOXON CT
Citation
Lb. Flannery et al., FABRICATION AND CHARACTERIZATION OF P-TYPE GAN METAL-SEMICONDUCTOR-METAL ULTRAVIOLET PHOTOCONDUCTORS GROWN BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 307-310
Citations number
13
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
50
Issue
1-3
Year of publication
1997
Pages
307 - 310
Database
ISI
SICI code
0921-5107(1997)50:1-3<307:FACOPG>2.0.ZU;2-K
Abstract
We have fabricated interdigital metal-semiconductor-metal ultraviolet photoconductors using p-type GaN grown by MBE. The material had a hole concentration of 10(18) cm(-3) and a mobility of 5 cm(2) V-1 s(-1). T he spectral response of the detectors has been measured and it shows a peak at 364.2 nm (3.402 eV) possibly caused by excitonic effects. The transient response of the photodetector cannot be described by a sing le time constant. The rise and fall times of the photoresponse are dif ferent indicating that the theory usually applied to GaN photoconducto rs is not valid. (C) 1997 Elsevier Science S.A.