Pd/p-Si and Pd/n-Si devices were irradiated from 100 MeV gold (7+) ion
s for varying doses (similar to 10(11)-10(13) ions cm(-2)). The device
s were characterized from I-V and C-V studies. It has been found that
there is a change of conductivity type i.e. from n to p at a probed de
pth of similar to 8 mu m which is approximately the stopping range of
the gold ions in silicon. A deep acceptor state (similar to 0.61 eV ab
ove V.B. edge) with a peak density of similar to 10(9) cm(-2) is obser
ved for p-type irradiated devices at similar to 3 mu m which is attrib
uted to the displacement damage caused by the high energy heavy ion ir
radiation. (C) 1998 Elsevier Science Ltd. All rights reserved.