PD SI DEVICE CHARACTERISTICS ON 100 MEV GOLD IONS IRRADIATION/

Pd/p-Si and Pd/n-Si devices were irradiated from 100 MeV gold (7+) ion s for varying doses (similar to 10(11)-10(13) ions cm(-2)). The device s were characterized from I-V and C-V studies. It has been found that there is a change of conductivity type i.e. from n to p at a probed de pth of similar to 8 mu m which is approximately the stopping range of the gold ions in silicon. A deep acceptor state (similar to 0.61 eV ab ove V.B. edge) with a peak density of similar to 10(9) cm(-2) is obser ved for p-type irradiated devices at similar to 3 mu m which is attrib uted to the displacement damage caused by the high energy heavy ion ir radiation. (C) 1998 Elsevier Science Ltd. All rights reserved.