ELECTRICAL EFFECTS IN MEV ENERGY ION-IRRADIATED AS2SE3 GLASS

MeV energy ion-implantation induced modifications in simple binary gla ss As2Se3 have been monitored by de conductivity measurements. The stu dy testifies that the process of ion-implantation at MeV energy is a n ovel technique in modifying the electronic properties of semiconductor s. Ni ion seems to have more drastic changes than Ag and Ge ions. As s mall a dose of 75 MeV Ni ions as 5 x 10(13) ions/cm(2) is sufficient t o produce remarkable changes in the conductivity of bombarded samples. The ion-induced defects appear to get diffused to a much deeper exten t than the projected range. (C) 1998 Elsevier Science Ltd. All rights reserved.