ADHESION IMPROVEMENT OF DIAMOND AND OTHER FILMS AFTER MEV ION IRRADIATION

Citation
Ur. Mhatre et al., ADHESION IMPROVEMENT OF DIAMOND AND OTHER FILMS AFTER MEV ION IRRADIATION, Vacuum, 48(12), 1997, pp. 999-1003
Citations number
17
Categorie Soggetti
Physics, Applied","Material Science
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
48
Issue
12
Year of publication
1997
Pages
999 - 1003
Database
ISI
SICI code
0042-207X(1997)48:12<999:AIODAO>2.0.ZU;2-H
Abstract
This paper reports the effects of MeV ion irradiation on the adhesion and quality of diamond films on WC-Co tool-bits and silver films on so da glass. Diamond films of about 3 mu m thickness were prepared, using the hot filament CVD technique, on WC-Co tool-bits. Silver films of 1 000 Angstrom thickness were prepared, using the Joule evaporation tech nique, on soda glass. 100 MeV I-127 beam was irradiated on the films a t various doses up to 1 x 10(14) ions/cm(2). Adhesion strength was mea sured using a pin-pull test. Scotch tape test was also performed on so me of the films; SEM images show no morphological modifications of the diamond films after irradiation. Laser Raman spectra show that the ir radiation causes almost complete elimination of non-diamond carbon pre sent in the films. Adhesion strength of the diamond films as determine d by Pin-pull test show improvement at least by 65 kgf/cm(2) after irr adiation. Improvement in the adhesion of silver films is found to be d ependent on the amount of electronic energy loss (S-e) at the film-sub strate interface. It is shown that for silver film on soda glass S-e > 0.7 keV/Angstrom, is needed if the adhesion is required to be achieve d at a dose of 1 x 10(13) ions/cm(2) using ion irradiation of 100 MeV I-127 beam. Main cause of the improvements in the adhesion and quality of the films is suggested to be the energy deposited to the electroni c system of the material by the projectile ion. (C) 1998 Elsevier Scie nce Ltd. All rights reserved.