USE OF HIGH-ENERGY BORON ION IRRADIATION TO FACILITATE STM INVESTIGATIONS OF CVD DIAMOND

Citation
Av. Sumant et al., USE OF HIGH-ENERGY BORON ION IRRADIATION TO FACILITATE STM INVESTIGATIONS OF CVD DIAMOND, Vacuum, 48(12), 1997, pp. 1005-1010
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
48
Issue
12
Year of publication
1997
Pages
1005 - 1010
Database
ISI
SICI code
0042-207X(1997)48:12<1005:UOHBII>2.0.ZU;2-9
Abstract
Diamond films are synthesized using hot filament chemical vapour depos ition (HF-CVD) method. The films are irradiated by high energy boron i ons using Pelletron accelerator, followed by thermal annealing treatme nt to achieve doping. It is shown that this method of doping avoids su rface disorder and graphitization in the films, which in turn facilita te viable scanning tunneling microscopic (STM) investigations on diamo nd films. With STM imaging it is observed that smooth facets of diamon d crystallites exhibit a characteristic layered structure at nano-leve l. The nature of surface disorder produced on film surfaces from nitro gen plasma treatment and atomic hydrogen treatment is also studied. (C ) 1998 Elsevier Science Ltd. All rights reserved.