LOW-THRESHOLD INALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS USING TRANSPARENT CONTACTS

Authors
CHUA CL THORNTON RL TREAT DW KNEISSL M DUNNROWICZ C
Citation
Cl. Chua et al., LOW-THRESHOLD INALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS USING TRANSPARENT CONTACTS, Applied physics letters, 72(9), 1998, pp. 1001-1003
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
9
Year of publication
1998
Pages
1001 - 1003
Database
ISI
SICI code
0003-6951(1998)72:9<1001:LIVSLA>2.0.ZU;2-K
Abstract
We present top-emitting all-epitaxial planar laterally oxidized vertic al-cavity surface-emitting lasers employing transparent indium-tin-oxi de electrodes. The transparent contacts facilitate device fabrication and offer significantly denser device packing than similar planar late rally oxidized structures using metal contacts. The InAlGaAs-based dev ices operate at a wavelength of 817 nm with a minimum threshold curren t of 175 mu A. (C) 1998 American Institute of Physics.