A NOVEL TOOL FOR MAPPING COMPOSITION DISTRIBUTIONS IN SEMICONDUCTOR MICROSTRUCTURES-APPLICATION TO INXGA1-XP QUANTUM WIRES

Authors
DUA P COOPER SL CHENG KY
Citation
P. Dua et al., A NOVEL TOOL FOR MAPPING COMPOSITION DISTRIBUTIONS IN SEMICONDUCTOR MICROSTRUCTURES-APPLICATION TO INXGA1-XP QUANTUM WIRES, Applied physics letters, 72(9), 1998, pp. 1072-1074
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
9
Year of publication
1998
Pages
1072 - 1074
Database
ISI
SICI code
0003-6951(1998)72:9<1072:ANTFMC>2.0.ZU;2-S
Abstract
A technique is described which employs resonant Raman scattering for n ondestructive, quantitative analysis of alloy composition distribution s and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulati on profile of narrow (similar to 150 Angstrom) InxGa1-xP multiquantum wire array grown via a strain-induced laterally ordered process. (C) 1 998 American Institute of Physics.