DIRECT AND INVERSE EQUIVALENT INALAS-INP INTERFACES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
VIGNAUD D WALLART X MOLLOT F
Citation
D. Vignaud et al., DIRECT AND INVERSE EQUIVALENT INALAS-INP INTERFACES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(9), 1998, pp. 1075-1077
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
9
Year of publication
1998
Pages
1075 - 1077
Database
ISI
SICI code
0003-6951(1998)72:9<1075:DAIEII>2.0.ZU;2-O
Abstract
InAlAs-InP type II heterostructures grown by gas-source molecular beam epitaxy have been studied by photoluminescence. The interface recombi nation energy is found around 1.27-1.28 eV in the low injection limit and shifts towards higher energy when increasing the incident power. S imilar results are obtained for direct (InAlAs grown on InP) and inver se (InP on InAlAs)structures. (C) 1998 American Institute of Physics.