RESONANT PHOTOEMISSION AND PHOTOABSORPTION AT THE NI L-2,L-3 EDGES OFNIGA AND NI3GA

The electronic structures of NiGa and Ni3Ga were studied by resonant p hotoemission spectroscopy (RESPES) and X-ray-absorption spectroscopy ( XAS) at the Ni L-2,L-3 edges. The RESPES data at the Ni 2p excitation threshold were compared with those at the Ni 3p absorption edge for Ni Ga, and the RESPES and XAS data for Ni3Ga were compared with those for Ni3Al. The number of d holes per Ni atom, determined from the XAS dat a, is 1.32 and 1.42 for NiGa and Ni3Ga, respectively, which shows corr elation with heat of formation of the bulk compounds. (C) 1998 Elsevie r Science B.V. All rights reserved.