Hm. Kimura et al., FORMATION OF NANOGRANULAR AMORPHOUS PHASE IN RAPIDLY SOLIDIFIED AL-TI-M (M=V, FE, CO OR NI) ALLOYS AND THEIR MECHANICAL STRENGTH, Nanostructured materials, 8(7), 1997, pp. 833-844
A nanogranular mixed structure consisting of amorphous and fcc-Al phas
es was formed in malt-spun Al-Ti-M (M=V Fe, Co or Ni) alloys containin
g more than 92 at% Al. The composition range of the nanogranular struc
ture is the widest for M=Fe and Co,followed by Ni and then V. The high
est Al concentration for formation of the nanogranular amorphous phase
reaches 94% Al for the Fe-and Co containing alloys. The amorphous and
Al phases are homogeneously coexistent. The grain sizes of the amorph
ous and Al phases are about 11 and 10 nm, respectively,for Al93Ti4Fe3
and increase in the order of Fe < Co < Ni < V. However, their grain si
zes keep small values of 8 and 25 nm, respectively, even for Al93Ti4V3
. These nanogranular alloys exhibit high tensile strength (sigma(f)) e
xceeding 1000 MPa and high Vickers hardness (H-v) above 290 and the hi
ghest sigma f and H-v are 1320 MPa and 450, respectively,for the Al93T
i4Fe3 alloy. The sigma f and H-v change in the order of Fe > Ni > Co >
V. This order does not completely agree with that for the grain sizes
of the amorphous and Al phases because of the difference in their vol
ume fractions. The high mechanical strength of the nanogranular alloys
is due to the refinement effect of the amorphous and Al grains and th
e disordering-induced strengthening effect of the amorphous phase. The
high formation tendency of the amorphous phase is presumably due to t
he increase in the stability of the supercooled liquid against crystal
lization caused by the difficulty of atomic diffusivity resulting from
the strong attractive interaction among the constituent elements. The
synthesis of the nanogranular amorphous and Al phases with high mecha
nical strength in the Al-rich alloys is important for future developme
nt of a new type of high specific strength material. (C) 1998 Acta Met
allurgica Inc.