A MODEL FOR CONVECTIVE MASS-TRANSPORT IN LIQUID-PHASE EPITAXIAL-GROWTH OF SEMICONDUCTORS

A numerical simulation model for the convective mass transport occurri ng during the liquid phase epitaxial growth of GaInAs is presented. Th e mass transport and fluid flow equations in the liquid phase, mass tr ansport equation in the solid phase and the relationships between conc entrations and temperature obtained from the phase diagram constitute the governing equations. These equations together with appropriate int erface and boundary conditions were solved numerically by the finite e lement method for a sandwich growth system. Numerical results show tha t the solutal convection plays an important role in this materials pro cessing technique, enhances growth rate and influences compositional u niformity of the grown crystals. (C) 1997 Elsevier Science Ltd.