LOW-TEMPERATURE DIELECTRIC-DISPERSION IN SN2P2S6

Citation
M. Iwata et al., LOW-TEMPERATURE DIELECTRIC-DISPERSION IN SN2P2S6, Journal of the Physical Society of Japan, 67(2), 1998, pp. 499-501
Citations number
17
Categorie Soggetti
Physics
ISSN journal
00319015
Volume
67
Issue
2
Year of publication
1998
Pages
499 - 501
Database
ISI
SICI code
0031-9015(1998)67:2<499:LDIS>2.0.ZU;2-U
Abstract
The dielectric dispersion in single crystals of stannous thiohypodipho sphate, Sn2P2S6, which shows ferroelectricity at room temperature, was measured in the frequency range between 100 Hz and 10 MHz below room temperature. We found that the non-Debye type dielectric dispersion ap pears below 100 K. From the dielectric dispersion, we determined the a ctivation energy and the attempt frequency by assuming the Arrhenius r elation. The nature of the orientational dynamics in the dipole system of Sn2P2S6 was discussed.