RESONANT-PHOTOELECTROMAGNETIC EFFECTS IN FAR-INFRARED REGIONS FOR COMPOUND SEMICONDUCTORS

The dc voltage generation associated with cyclotron resonance (CR) and impurity cyclotron resonance (ICR) in n-InGaAs and n-InSb has been st udied. In both materials, it is found that the observed voltage decrea ses rapidly with increasing temperature and the line shape has similar structure to the absorption coefficient. Using a thermomagnetic model where a heal current induces a voltage through the Nernst-Ettingshaus en effect, we have explained the experimental results. This technique allows us to investigate resonant absorption for a sample in which tra nsmission measurements are difficult to perform, as well as to study t he mechanism of phonon transport through the sample.