POLARITON BAND-STRUCTURE IN III-V SEMICONDUCTORS DOPED WITH AN ORDERED CHAIN OF IDENTICAL 2-LEVEL QUANTUM DOTS OR QUANTUM-WELLS

In this paper, we study quantum electrodynamics of III-V semiconductor s doped with an ordered chain of identical two-level atoms. To find th e dispersion relation of the polariton-atom system, we diagonalize the Hamiltonian in the one-polariton sector of the entire Hilbert space. We found that when the atomic resonance frequencies of two atoms lie i nside the polariton gap, the spectrum of the system contains polariton -atom bound states. For finite interatomic distances these states form energy band due to an effective atom-atom interaction. The above phen omenon can be observed in III-V semiconductors doped with an array qua ntum dots or quantum wells where a quantum well or a quantum dot will act as a two-level system. Numerical calculations for impurity band an d effective mass are performed for AlAs.