TEMPERATURE-DEPENDENCE OF INTERBAND-TRANSITIONS IN SHORT-PERIOD GAAS ALAS SUPERLATTICES/

Authors
GUHA S CAI Q CHANDRASEKHAR M CHANDRASEKHAR HR KIM HJ ALVARENGA AD VOGELGESANG R RAMDAS AK MELLOCH MR
Citation
S. Guha et al., TEMPERATURE-DEPENDENCE OF INTERBAND-TRANSITIONS IN SHORT-PERIOD GAAS ALAS SUPERLATTICES/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, 1997, pp. 57-62
Citations number
10
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
12
Year of publication
1997
Pages
57 - 62
Database
ISI
SICI code
0204-3467(1997)12:<57:TOIISG>2.0.ZU;2-6
Abstract
We study the temperature dependence of the type-I and type-II transiti ons in (GaAs)(m)/(AlAs)(m) superlattices using photoluminescence spect roscopy. The temperature dependence of energy bands for the narrow wel ls can be fit very well with a Bose-Einstein type equation. The parame ters that describe the temperature dependence of the interband transit ion energies and the broadening parameters are evaluated.