QUASI-ONE-DIMENSIONAL ELECTRON GASES IN A GATED UNDOPED GAAS ALXGA1-XAS HETEROSTRUCTURE/

We describe a novel approach to realize quasi-one-dimensional electron gases with high electron densities using an undoped GaAs/AlxGa1-xAs h eterostructure. The quasi-one-dimensional electron gas is field effect induced via a narrow top gate and the electrons are extracted from io n-implanted ohmic regions. The wires are characterized by low temperat ure magnetotransport experiments. The quasi-one-dimensional nature of the transport manifests itself in the observed depopulation of the one -dimensional subbands in a magnetic field perpendicular to the heteroi nterface. The effective wire width is found to be comparable to the ga te width.