PICOSECOND PULSE GENERATION IN MICROCAVITY QUANTUM-DOT LASERS

A picosecond pulse generation was successfully demonstrated in a micro cavity quantum dot laser with an active region of self-formed quantum dot structures. The obtained pulse width was similar to 90 ps. A fast rise time in the order of 10 ps was obtained, in spite of the predicte d phonon bottleneck problem. Carrier diffusion in a wetting layer with monolayer fluctuations affects the carrier dynamics in a quantum dot structure device. Although the carrier diffusion is significant at 77 K, a fast rise time and a short optical pulse have been obtained owing to a cavity effect.