FREE VERSUS LOCALIZED EXCITON IN GAAS V-SHAPED QUANTUM WIRES

Authors
LOMASCOLO M CINGOLANI R RINALDI R REINHART FK
Citation
M. Lomascolo et al., FREE VERSUS LOCALIZED EXCITON IN GAAS V-SHAPED QUANTUM WIRES, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, 1997, pp. 131-136
Citations number
8
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
12
Year of publication
1997
Pages
131 - 136
Database
ISI
SICI code
0204-3467(1997)12:<131:FVLEIG>2.0.ZU;2-C
Abstract
We present a systematic investigation of transient photoluminescence i n GaAs V-shaped Quantum Wires as a function of temperature, aimed at t he understanding of the radiative recombination mechanism of the groun d level (localized vs free exciton recombination). Exciton localizatio n energy, density of localization centres and exciton-intrinsic Lifeti me have been determined from the theoretical analysis of the transient photoluminescence spectra.