ENHANCEMENT OF TUNNELING CURRENT OF HOLES DUE TO INTERNAL STRAINS

Authors
BITTENCOURT AC COHEN AM MARQUES GE
Citation
Ac. Bittencourt et al., ENHANCEMENT OF TUNNELING CURRENT OF HOLES DUE TO INTERNAL STRAINS, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, 1997, pp. 187-194
Citations number
7
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
12
Year of publication
1997
Pages
187 - 194
Database
ISI
SICI code
0204-3467(1997)12:<187:EOTCOH>2.0.ZU;2-2
Abstract
We study effects of axial strains and the admixture of resonant hole s tates on transmittivities and on partial and total currents in GaxIn1- xAsInP double-barriers under external fields. We discuss possible opti mal strain conditions on coherent tunneling probabilities and total cu rrents of holes which may enhance transport properties of some types o f carriers.