MODELING OF THE REACTIVE INTERFACE FORMATION ON BI2SR2CACU2O8

We have applied the phenomenological model of diffused interfaces, dev eloped originally to describe the Fe growth on Bi2Sr2CaCu2O8, to inter pret quantitatively the core photoemission spectra of two reactive int erfaces, namely Cr and Ge on Bi2Sr2CaCu2O8. At room temperature the in terfaces with Fe and Cr have the same kinetics of growth suggesting si milar adatom condensation, while the semiconductor-superconductor inte rface grows layer-by-layer according to the Franck-van der Merwe kinet ics. Differences in the parameters of the model resulting from the sim ultaneous fit of the core-level decays are related to differences in t he microscopic processes occurring during the growth.