INTERDIFFUSION STUDIES IN GAASP GAAS AND GAASSB/GAAS SUPERLATTICES UNDER VARIOUS ARSENIC VAPOR-PRESSURES/

Interdiffusion coefficients on tile group V sublattice of GaAs were de termined in GaAsP/GaAs and GaAsSb/GaAs superlattices, Strained GaAs0.8 6P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs super lattices were annealed between 850 degrees C and 1100 degrees C under different arsenic vapor pressures. The diffusion coefficient was measu red by secondary ion mass spectroscopy and cathodoluminescence spectro scopy. The interdiffusion coefficient was higher under arsenic-rich co nditions than under gallium-rich conditions, pointing to an interstiti al-substitutional type of diffusion mechanism. (C) 1997 American Insti tute of Physics.