IMPROVEMENT OF THE PTCR EFFECT IN BA1-XSRXTIO3 SEMICONDUCTING CERAMICS BY DOPING OF BI2O3 VAPOR DURING SINTERING

Authors
QI JQ CHEN WP WU YJ LI LT
Citation
Jq. Qi et al., IMPROVEMENT OF THE PTCR EFFECT IN BA1-XSRXTIO3 SEMICONDUCTING CERAMICS BY DOPING OF BI2O3 VAPOR DURING SINTERING, Journal of the American Ceramic Society, 81(2), 1998, pp. 437-438
Citations number
10
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of the American Ceramic Society → ACNP
ISSN journal
00027820
Volume
81
Issue
2
Year of publication
1998
Pages
437 - 438
Database
ISI
SICI code
0002-7820(1998)81:2<437:IOTPEI>2.0.ZU;2-O
Abstract
The influence on the PTCR effect in Ba1-xSrxTiO3 semiconducting cerami cs by doping of Bi2O3 vapor during its sintering is reported in this p aper, Comparative experiments showed that the grains of Bi2O3-vapor-do ped samples were much smaller than those of undoped ones; both the mag nitude of the resistance jump and the positive temperature coefficient of resistance were considerably increased. Very dense samples with 8 orders of magnitude of resistance jump were obtained. The mechanism fo r the effect of Bi2O3 vapor doping is also discussed.