Jh. Je et al., PREFERRED ORIENTATION OF TIN FILMS STUDIED BY A REAL-TIME SYNCHROTRONX-RAY-SCATTERING, Journal of applied physics, 81(9), 1997, pp. 6126-6133
The orientational crossover phenomena in a radio frequency (rf) sputte
ring growth of TiN films were studied in in situ, real time synchrotro
n x-rap scattering experiments, For the films grown with pure Ar sputt
ering gas, the crossover from the (002)-oriented grains to the (111)-o
riented grains occurred as the film thickness was increased. As the sp
uttering power was increased, the crossover thickness, at which the gr
owth orientation changes from the [002] to the [111] direction, seemed
to decrease. The addition of N-2 besides Ar as sputtering gas suppres
sed the crossover, and consequently resulted in the (002) preferred or
ientation without exhibiting the crossover. We attribute the observed
crossover phenomena to the competition between the surface and the str
ain energy. The x-ray powder diffraction, the x-ray reflectivity, and
the ex situ atomic force microscopy surface topology studies consisten
tly suggest that the microscopic growth front was in fact always the (
002) planes. In the initial stage of growth, the (002) planes were ali
gned to the substrate surface to minimize the surface energy. At later
stages, however, the (002) growth front tilted away from the surface
by about 60 degrees to relax the strain, which caused the crossover of
the preferred growth direction to the [111] direction. (C) 1997 Ameri
can Institute of Physics.