NUMERICAL-SIMULATION OF AN OPTOELECTRONIC THYRISTOR IN THE REGIME OF INCOMPLETE TURN-OFF

Direct two-dimensional simulations are used to analyse the possibility of controlling the carrier concentration in the gated base of a GaAs optoelectronic thyristor, which operates in the regime of incomplete t urn-off. Modelling results indicate that the number of carriers, light intensity, current distribution, and the position of the light-emitti ng region the gated base of the thyristor can effectively be changed u sing gate currents, insufficient to turn the device completely off. Th e utilization of incomplete turn-off principle can be used for light-i ntensity modulation and switching purposes.