B. Wei et al., NITROGEN-INDUCED MODIFICATIONS IN MICROSTRUCTURE AND WEAR DURABILITY OF ULTRATHIN AMORPHOUS-CARBON FILMS, Journal of applied physics, 83(5), 1998, pp. 2491-2499
A systematic experimental investigation was carried out to understand
the effects of nitrogenation on the microstructure and wear durability
of thin amorphous-carbon films. The films were fabricated with 0%, 10
%, 15%, 20%, 30%, 40%, and 50% N-2 in the sputter gas. Microstructure
properties were characterized using Rutherford backscattering spectros
copy, electrical resistance, Raman spectroscopy, and x-ray photoelectr
on spectroscopy. Nanohardness and scratch wear resistance of the films
were studied with an atomic force microscope equipped with a diamond
tip. The head-disk interface tribological properties of the films were
tested with industrial standard contact-start-stop wear instrumentati
on. The results indicate that the introduction of nitrogen into the ca
rbon film increases the film lattice disorder and allows for the forma
tion of carbon-nitrogen single, double, and triple bonds. The nitrogen
atomic concentration in the film, electrical resistance, and the rati
o of carbon-nitrogen bonds to carbon-carbon bonds increase with increa
sing N-2 in the sputter gas. A significant addition in C=N bond percen
tage is observed when the N-2 exceeds 30% in the sputter gas. Both the
nanohardness and scratch wear resistance of the carbon film can be si
gnificantly improved by incorporating an optimized nitrogen concentrat
ion in the film. In this study, the film processed with 30% N-2 showed
the highest nanohardness and wear resistance.,The degraded nanowear r
esistance for the films processed with 40% and 50% N-2 is attributed t
o the significant addition of C=N bonds. Within a wide process range (
15%-30% N-2), the films exhibit excellent tribological performances at
the head-disk interface. The wear mechanisms from the contact-start-s
top wear tests are interpreted based on the understanding of film stru
ctures and film mechanical properties. (C) 1998 American Institute of
Physics.