A. Taguchi et K. Takahei, ERBIUM IN SI - ESTIMATION OF ENERGY-TRANSFER RATE AND TRAP DEPTH FROMTEMPERATURE-DEPENDENCE OF INTRA-4F-SHELL LUMINESCENCE, Journal of applied physics, 83(5), 1998, pp. 2800-2805
We investigated the temperature dependence of erbium (Er) 4f-shell lum
inescence decay time and intensity in silicon based on a multiphonon-a
ssisted energy transfer model, which has been verified for the Yb-dope
d InP system and has already been successfully applied to various ran-
earth doped III-V semiconductors. The temperature dependence of the de
cay time of-Er 4f-shell luminescence was calculated using two fitting
parameters: the depth of a trap level related to the 4f-shell luminesc
ence and the energy transfer probability between the Er 4f shell and t
he electronic state of the silicon host. For Si:Er codoped with oxygen
and Si:Er codoped with nitrogen, the calculated temperature dependenc
e was compared with the experimentally observed temperature dependence
. A reasonably good fit was obtained between the calculated results an
d the experimental results, suggesting that the Er 4f-shell luminescen
ce is caused by the multiphonon-assisted energy transfer. The estimate
d energy transfer probability for Si:Er,N is larger than that for Si:E
r,O, suggesting a stronger interaction between the Er 4f-shell and the
Si host in Si:Er,N than in Si:Er,O. (C) 1998 American Institute of Ph
ysics.