FORCING OF CHAOS IN SEMICONDUCTOR SUPERLATTICES

Citation
Ll. Bonilla et Om. Bulashenko, FORCING OF CHAOS IN SEMICONDUCTOR SUPERLATTICES, Superlattices and microstructures, 23(1), 1998, pp. 13-17
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
23
Issue
1
Year of publication
1998
Pages
13 - 17
Database
ISI
SICI code
0749-6036(1998)23:1<13:FOCISS>2.0.ZU;2-9
Abstract
The chaotic behavior of high-field transport in weakly-coupled narrow- miniband GaAs/AlAs superlattices (SL) under ac + dc biases has been nu merically studied within a self-consistent discrete model. It is shown that the regions of entrainment and quasiperiodicity form the Arnol'd tongues on the driving frequency-driving amplitude parameter plane. C haos is demonstrated to appear at the boundaries of the tongues and in the regions where they overlap. Numerical simulation shows that ac dr iving can lead to chaos for different regimes: (i) when the electric-f ield domains in the SL are stable; and (ii) when they are unstable (pe riodically oscillating). (C) 1998 Academic Press Limited.