PROPERTIES OF PHOTOEXCITED ELECTRONS AND HOLES IN UNDOPED GAAS ALGAASQWS STUDIED BY CLASSICAL CYCLOTRON-RESONANCE/

Authors
KOZHEVNIKOV M ASHKINADZE BM COHEN E RON A PFEIFFER LN
Citation
M. Kozhevnikov et al., PROPERTIES OF PHOTOEXCITED ELECTRONS AND HOLES IN UNDOPED GAAS ALGAASQWS STUDIED BY CLASSICAL CYCLOTRON-RESONANCE/, Superlattices and microstructures, 23(1), 1998, pp. 67-70
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
23
Issue
1
Year of publication
1998
Pages
67 - 70
Database
ISI
SICI code
0749-6036(1998)23:1<67:POPEAH>2.0.ZU;2-U
Abstract
We study photoinduced microwave absorption (PMA) at 36 GHz by photogen erated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobili ties are obtained. It is found that the electron cyclotron mass (m(cr) ) increases with increasing microwave power and with lattice temperatu re. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential. (C) 1998 Academic Press Limit ed.