INTER-ISLAND ENERGY-TRANSFER AND INPLANE EXCITON MIGRATION IN ALGAAS GAAS QUANTUM-WELLS DETECTED BY EXCITON DYNAMICS/

Authors
GODLEWSKI M HOLZ PO BERGMAN JP MONEMAR B REGINSKI K BUGAJSKI A GOLDYS EM TANSLEY TL
Citation
M. Godlewski et al., INTER-ISLAND ENERGY-TRANSFER AND INPLANE EXCITON MIGRATION IN ALGAAS GAAS QUANTUM-WELLS DETECTED BY EXCITON DYNAMICS/, Superlattices and microstructures, 23(1), 1998, pp. 107-111
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
23
Issue
1
Year of publication
1998
Pages
107 - 111
Database
ISI
SICI code
0749-6036(1998)23:1<107:IEAIEM>2.0.ZU;2-U
Abstract
We present the results of optical, steady-state and time-resolved stud ies of photoluminescence and photoluminescence excitation in high-qual ity Al0.3Ga0.7As/GaAs quantum wells in which the presence of large (la rger than the exciton radius) atomically flat islands can be inferred, identical to the case of interrupted MBE growth. Migration of exciton s towards lower-lying energy states induced by local potential fluctua tions and/or progressive localisation has been revealed and the transi tion rate between quantum well regions 24 to 25 monolayers thick has b een derived to be 290 ps(-1). (C) 1998 Academic Press Limited.