TEMPERATURE TUNING OF EXCITON-PHOTON COUPLING IN A MICROCAVITY GROWN ON A (311)A GAAS SUBSTRATE

Citation
Fm. Matinaga et al., TEMPERATURE TUNING OF EXCITON-PHOTON COUPLING IN A MICROCAVITY GROWN ON A (311)A GAAS SUBSTRATE, Superlattices and microstructures, 23(1), 1998, pp. 181-186
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
23
Issue
1
Year of publication
1998
Pages
181 - 186
Database
ISI
SICI code
0749-6036(1998)23:1<181:TTOECI>2.0.ZU;2-5
Abstract
We report on the observation of photon-exciton coupling in a MQW micro cavity grown on a (311)A GaAs substrate by photoluminescence. This cou pling or Rabi splitting was observed by tuning the heavy hole exciton line and the cavity mode by varying the temperature in the range 80-20 0 K. (C) 1998 Academic Press Limited.