QUASI-GAPLESS SEMICONDUCTORS (ON THE GAPL ESS STATE INDUCED BY IMPURITY CENTERS)

Authors
DAUNOV MI KAMILOV IK ELIZAROV VA MAGOMEDOV AB DANILOV VI
Citation
Mi. Daunov et al., QUASI-GAPLESS SEMICONDUCTORS (ON THE GAPL ESS STATE INDUCED BY IMPURITY CENTERS), Doklady Akademii nauk. Rossijskaa akademia nauk, 357(5), 1997, pp. 612-615
Citations number
11
Journal title
Doklady Akademii nauk. Rossijskaa akademia nauk → ACNP
ISSN journal
08695652
Volume
357
Issue
5
Year of publication
1997
Pages
612 - 615
Database
ISI
SICI code
0869-5652(1997)357:5<612:QS(TGE>2.0.ZU;2-R