DIRECT MOTT INSULATOR TO SUPERFLUID TRANSITION IN THE PRESENCE OF DISORDER

Citation
F. Pazmandi et Gt. Zimanyi, DIRECT MOTT INSULATOR TO SUPERFLUID TRANSITION IN THE PRESENCE OF DISORDER, Physical review. B, Condensed matter, 57(9), 1998, pp. 5044-5047
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
9
Year of publication
1998
Pages
5044 - 5047
Database
ISI
SICI code
0163-1829(1998)57:9<5044:DMITST>2.0.ZU;2-1
Abstract
We use renormalization-group theory to examine the quantum phase trans itions upon exiting the insulating phase of a disordered, strongly int eracting boson system. For weak disorder we End a direct transition fr om this Mott insulator to the superfluid phase. In d>4 a finite region around the particle-hole symmetric point supports this direct transit ion, whereas for 2 less than or equal to d<4 perturbative arguments su ggest that the direct transition survives only precisely at commensura te filling. For strong disorder the renormalization trajectories pass next to two fixed points, describing a pair of distinct transitions; f irst from the Mott insulator to the Bose glass, and then from the Bose glass to the superfluid. The latter fixed point possesses statistical particle-hole symmetry and a dynamical exponent z, equal to the dimen sion d.