Jl. Mercer et al., AB-INITIO CALCULATIONS OF THE ENERGETICS OF THE NEUTRAL SI VACANCY DEFECT, Modelling and simulation in materials science and engineering, 6(1), 1998, pp. 1-8
Ab initio plane-wave pseudopotential calculations for the neutral sili
con vacancy indicate a formation energy of 3.6 eV, with the surroundin
g lattice undergoing a tetragonal distortion with the nearby atoms for
ming two dimers having bond lengths 2.91 Angstrom. Close in energy is
a tetrahedrally distorted structure in which the nearby atoms relax to
wards the vacancy by 12.6% of the bulk bond length. Additional distort
ions with trigonal symmetry were also investigated, but no stable stru
ctures were found. The symmetry, energetics, and geometry are found to
be a sensitive function of the computational basis-set and supercell
used in the plane-wave calculations.