EVALUATION OF THE SIMULTANEOUS USE OF CP2VME2 AND CPTICL2N(SIME3)(2) AS PRECURSORS TO CERAMIC THIN-FILMS CONTAINING TITANIUM AND VANADIUM -TOWARDS TITANIUM-VANADIUM CARBONITRIDE

Ceramic thin films containing titanium, vanadium, carbon, oxygen and n itrogen were obtained on steel substrates at 873 K, under nitrogen and helium gases and at low pressure, by chemical vapor deposition (CVD) from two organometallic precursors, CpTiCl2N(SiMe3)(2) and Cp2VMe2 (Cp , cyclopentadienyl), Independent TG-DTA-MS and CVD studies of the two precursors showed their ability to co-decompose within compatible temp erature and pressure domains, The mechanism of the reactions occurring inside the CVD apparatus was also approached by CC-MS and NMR analyse s of the condensed decomposition products. CVD conducted under He gas confirmed that the formation of nitride resulted from the nitrogen ato ms of the precursor, but the nitrogen content in the films remained lo wer than approx, 5%, Higher nitrogen contents (up to 12%) were only ob tained when using ammonia as a carrier gas. Both precursors being air- and moisture-sensitive, high-purity CVD equipment was used to reduce o xycarbide formation. (C) 1998 John Wiley & Sons, Ltd.