PHOTOLUMINESCENCE MEASUREMENTS OF GAAS GROWN BY LIQUID-PHASE EPITAXY FROM GA-BI SOLUTION

Authors
CIORGA M BRYJA L MISIEWICZ J PASZKIEWICZ R PANEK M PASZKIEWICZ B TLACZALA M
Citation
M. Ciorga et al., PHOTOLUMINESCENCE MEASUREMENTS OF GAAS GROWN BY LIQUID-PHASE EPITAXY FROM GA-BI SOLUTION, Advanced materials for optics and electronics, 8(1), 1998, pp. 9-12
Citations number
10
Categorie Soggetti
Material Science",Optics,"Engineering, Eletrical & Electronic","Chemistry Applied
Journal title
Advanced materials for optics and electronics → ACNP
ISSN journal
10579257
Volume
8
Issue
1
Year of publication
1998
Pages
9 - 12
Database
ISI
SICI code
1057-9257(1998)8:1<9:PMOGGB>2.0.ZU;2-K
Abstract
Thick, intentionally undoped GaAs epitaxial layers grown by LPE from G a-Bi solution with different contents of Si in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T= 2 K, The dependence of the photoluminescence spectrum on the content o f Bi in solution was analysed, (C) 1998 John Wiley & Sons, Ltd.