PRESSURE-INDUCED SHALLOW DONOR TRANSFORMATIONS IN GALLIUM-ARSENIDE

Authors
HSU L ZEHENDER S BAUSER E HALLER EE
Citation
L. Hsu et al., PRESSURE-INDUCED SHALLOW DONOR TRANSFORMATIONS IN GALLIUM-ARSENIDE, Physical review. B, Condensed matter, 55(16), 1997, pp. 10515-10518
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
16
Year of publication
1997
Pages
10515 - 10518
Database
ISI
SICI code
0163-1829(1997)55:16<10515:PSDTIG>2.0.ZU;2-W
Abstract
Using hydrostatic pressure, we have transformed GaAs into an indirect band-gap semiconductor with a conduction-band minimum near the X point of the Brillouin zone. Ground to bound excited-state transitions of X -point group-IV donors in GaAs are investigated using broadband far-in frared Fourier-transform absorption spectroscopy.