SOL-GEL PROCESSING OF LAF3 THIN-FILMS

Citation
S. Fujihara et al., SOL-GEL PROCESSING OF LAF3 THIN-FILMS, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 106(1), 1998, pp. 124-126
Citations number
8
Categorie Soggetti
Material Science, Ceramics
ISSN journal
09145400
Volume
106
Issue
1
Year of publication
1998
Pages
124 - 126
Database
ISI
SICI code
0914-5400(1998)106:1<124:SPOLT>2.0.ZU;2-G
Abstract
Lanthanum fluoride thin films were prepared on silica glass substrates by a sol-gel method using trifluoroacetic acid (TFA) as a fluorine so urce. A coating solution was produced from lanthanum acetate and trifl uoroacetic acid dissolved in 2-propanol. Trifluoroacetate gel films we re formed by spin coating the sol, which were converted to LaF3 thin f ilms by heat-treatment at 300-500 degrees C for 10 min. The formation of LaF3 is considered to result from the reaction between lanthanum io ns and the fluorine species generated by the decomposition of trifluor oacetate ions at elevated temperatures. The film fired at 300 degrees C had a smooth surface with a grain size of 30 nm, Cracks and voids we re only observed in the films fired at 400 and 500 degrees C. The film s fired at 800 and 400 degrees C exhibited transmittance of greater th an 90% in the visible region.