FABRICATION OF A LOW-OPERATING VOLTAGE DIAMOND THIN-FILM METAL-SEMICONDUCTOR-METAL PHOTODETECTOR BY LASER WRITING LITHOGRAPHY

Authors
JIANG W AHN JS XU FL LIAW CY CHAN YC ZHOU Y LAM YL
Citation
W. Jiang et al., FABRICATION OF A LOW-OPERATING VOLTAGE DIAMOND THIN-FILM METAL-SEMICONDUCTOR-METAL PHOTODETECTOR BY LASER WRITING LITHOGRAPHY, Applied physics letters, 72(10), 1998, pp. 1131-1133
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
10
Year of publication
1998
Pages
1131 - 1133
Database
ISI
SICI code
0003-6951(1998)72:10<1131:FOALVD>2.0.ZU;2-F
Abstract
An ultraviolet-sensitive photodetector based on the metal-semiconducto r-metal structure has been fabricated on a chemical-vapor-deposited di amond thin film grown on a silicon substrate. Device processing techni ques employed include maskless laser writing lithography, image revers al processing and sacrificial layer inclusion, which resulted in devic es with an electrode finger separation of only 2.5 mu m. This allows f or a low operating voltage of only 5 V, which is very much lower than what has been achieved so far. (C) 1998 American Institute of Physics. [S0003-6951(98)01310-2].