LEAKAGE CURRENT MODELS OF THIN-FILM SILICON-ON-INSULATOR DEVICES

Thin film silicon-on-insulator (SOI) devices have an advantage of exce llent isolation due to the buried oxide layer leading to reduced capac itance coupling and no latchup in complementary metal-oxide-silicon ci rcuits compared with bulk silicon devices. Reduced junction area shoul d lead to lower leakage for a given device. However, because of the bu ried oxide, stress is built up in the isolation processes, especially near the island edges, inducing new kinds of leakage currents, which a re not observed in bulk silicon devices. This letter proposes five lea kage current models of the partially depleted SOI devices, identifies their origins, and suggests methods to prevent each type. (C) 1998 Ame rican Institute of Physics. [S0003-6951(98)01510-0].