SILICON SINGLE-ELECTRON QUANTUM-DOT TRANSISTOR SWITCH OPERATING AT ROOM-TEMPERATURE

We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillati ons are attributed to electron tunneling through a single silicon quan tum dot inside a narrow wire channel. Analysis of its current-voltage characteristic indicates that the energy level separation is about 110 meV and-the silicon dot diameter is about 12 nm. (C) 1998 American In stitute of Physics. [S0003-6951(98)01210-8].