INFLUENCE OF RANDOM POTENTIAL FLUCTUATIONS ON THE INTERWELL RADIATIVERECOMBINATION IN BIASED DOUBLE-QUANTUM-WELL

A systematic study of the photoluminescence from double quantum well i n p-i-n GaAs/AlGaAs/GaAs heterostructure under the influence of an ext ernal electric and magnetic field at different temperatures has been p erformed. The luminescence peak of the indirect recombination exhibits a dynamical narrowing when increasing the temperature from 10 to 20 K . This is explained by thermal delocalization of electrons and holes l ocalized in the wells at lon temperatures due to the random potential fluctuations. This explanation is supported by time-resolved photolumi nescence measurements of the different components of the spectra.