ELECTROABSORPTION MODULATOR USING A TYPE-II QUANTUM-WELL IN THE INXGA1-XAS INALAS/INP SYSTEM/

In this paper photoluminescence measurements at low temperature under different excitation powers were carried out on an InGaAs tensile stra ined (x = 0.3) quantum well with InGaAs barriers lattice matched (LM) to InP. Evidence of a type-II recombination was found between carriers confined in the tensile layer and in the LM layer. This study allows us to deduce an accurate determination of the conduction band offset i n the Ino(0.3)Ga(0.7)As/In0.53Ga0.47As/InP system. Moreover, we includ e the previous type-II structure between InAlAs barriers in order to c onfine both electrons and holes. This structure has potential applicat ions in electrooptical modulators. We simulate its optical modulation by solving the Schrodinger equation using the envelope function approx imation and calculating the absorption spectrum taking into account ex citonic effects. (C) 1998 Academic Press Limited.